Microelectronics Publications
110. 
A.K.M. Newaz, W.-J. Chang, K.D. Wallace, L.C. Edge, S.A.Wickline, R. Bashir, A. M. Gilbertson, L.F. Cohen, and S.A. Solin, "A ballistic Inverse-EOC nanosensor for sub-wavelength high sensitivity room temperature photon detection", Applied Physics Letters, 97, 2010.
100.
A.M. Gilbertson, A.K.M. Newaz, Woo-Jin Chang, R. Bashir, S.A. Solin, and L.F. Cohen, "Dimensional crossover and weak localization in ultra thin n-GaAs films", Applied Physics Letters, 95, 012113, 2009.
58.S. Lee, R. Bashir, "Dielectrophoresis and Chemically Mediated Assembly of three Terminal Silicon MOSFETS", Advanced Materials, 17, 2671-2677, 2005.
31.R. Bashir, F. Hebert, J. DeSantis, J. M. McGregor, W. Yindeepol, K. Brown, R. Razouk, F. Moraveji, T. Mills, P. Hopper, J. Mcginty, L. Smith, and T. Krakowski, "A Complementary Bipolar Technology Family with a Vertically Integrated PNP for High Frequency Analog Applications", Special Issue on Bipolar Technology, IEEE Transactions on Electron Devices, vol. 48, no. 11, November 2001, pp. 2525-2534.
25.R. Bashir, K-J Chao, and A. E. Kabir, "Atomic Force Microscopy Study of Self-Assembled Si1-xGex Islands Produced by Controlled Relaxation of Strained Films", Journal of Vacuum Science and Technology-B, Vol. 19, No. 2, March/April 2001, pp. 517-522.
24.S. Lee and R. Bashir, "Modeling and Characterization of Deep Trench Isolation Structures", Microelectronics Journal, Vol. 32, No. 4, Jan 2001, pp. 295-300.
21.R. Bashir and F. Hebert, "Stability of Boron And Phosphorus Implanted Tungsten Silicide Structures at HighTemperatures", Journal of Vacuum Science and Technology-B, Vol. 18, No. 4, July/Aug, 2000.
20.J. Babcock, P. Francis, R. Bashir, A. E. Kabir, T. Dhayahude, W. Yindeepol, S. J. Prasad, A. Kalnitsky, M. E. Thomas, H. Haggag, K. Egan, R. Razouk, and D. K. Schroder, "Precision Electrical Trimming of Poly-SiGe Resistors", IEEE Electron Device Letters, Vol. 21, No. 6, pp. 283-285, June 2000.
19.R. Bashir, T. Su, J. M. Sherman, G. W. Neudeck, J. Denton, and A. Obeidat "Reduction of Sidewall Defect Induced Leakage Currents by the Use of Nitrided Field Oxides in Silicon Selective Epitaxial Growth (SEG) Isolation for Advanced ULSI", Journal of Vacuum Science and Technology-B, Vol. 18, No. 2, March/April 2000.
18.R. Gomez, G. W. Neudeck, R. Bashir, "On the Design and Fabricaton of Novel Lateral Bipolar Transistor in a Deep-Submicron Technology", Microelectronics Journal, Vol. 31, No. 3, pp. 199-205, Feb 2000.
17.A. E. Kabir, R. Bashir, J. Bernstein, J. De Santis, R. Mathews, J. O. O'Boyle, C. Bracken, "Very High Sensitivity Acoustic Transducers with Thin P+ Membrane and Gold Back Plate", Sensors and Actuators-A, Vol. 78, issue 2-3, pp.138-142, 17th Dec. 1999.
16.R. Bashir, A. E. Kabir, and K. Chao, "Formation of Self-Assembled Si1-xGex Islands Using Reduced Pressure Chemical Vapor Deposition and Subsequent Thermal Annealing of Thin Germanium Rich Films", Applied Surface Science, 152, pp. 99-106, 1999.
15.R. Bashir, A. E. Kabir, P. Westrom, D. Rossman, "Phosphorus and Arsenic Dopant Profile Control for High Performance Epitaxial Base Bipolar Junction Devices", Applied Physics Letters, Volume 75, Issue 6, pp. 796-798, August 9th , 1999.
14.R. Bashir, F. Wang, W. Yindepool, J. De Santis, J. McGregor, "Back Gated Buried Oxide MOSFETs in a High Voltage Bipolar Technology for Bonded Oxide/SOI Interface Characterization", IEEE Electron Device Letter, Vol. 19, No. 8, pp. 282-284, August 1998.
13.R. Bashir, A. E. Kabir, F. Hebert, C. Bracken, "Tungsten Silicide and Tungsten Polycide Anisotropic Dry Etch Process for Highly Controlled Dimensions and Profiles", Journal of Vacuum Science and Technology-B, 16(4), pp. 2118-2120, Jul/Aug 1998.
12.M. Jamal Deen, S. Rumyantsev, R. Bashir, R. Taylor, "Measurements and Comparison of Low Frequency Noise in NPN and PNP Polysilicon Emitter Bipolar Junction Transistors", Journal of Applied Physics, Vol. 84, No.1, pp. 625-633, 1st July 1998.
11.R. Bashir, F. Hebert, "PLATOP-A Novel Planarized Trench Isolation and Field Oxide Formation Using Poly-Silicon", IEEE Electron Device Letters, Vol.17, No. 7, pp. 352-354, July 1996.
10.J. M. Sherman, G. W. Neudeck, J. P. Denton, R. Bashir, W. W. Fultz, "Elimination of the Sidewall Defects in Selective Epitaxial Growth (SEG) of Silicon for a Dielectric Isolation Technology", IEEE Electron Device Letters, Vol.17, No. 6, pp. 267-269, June 1996.
9.R. Bashir, S. Kim, N. Qadri, D. Jin, G. W. Neudeck, J. P. Denton, G. Yeric, K. Wu, A. Tasch, "Degradation of Insulators in the Silicon Selective Epitaxial Growth Ambient", IEEE Electron Device Letters, Vol. 16, no. 9, pp. 306-308, Sept. 1995.
8.R. Bashir, G. W. Neudeck, H. Yen, E. P. Kvam, "Characterization and Modeling of Sidewall Defects in Selective Epitaxial Growth of Silicon", Journal of Vacuum Science and Technology-B, Vol. 11, no. 5, p. 928-935, June/July 1995.
7.R. Bashir, G. W. Neudeck, H. Yen, E. P. Kvam, and J. P. Denton, "Characterization of Sidewall Defects in Selective Epitaxial Growth of Silicon", Journal of Vacuum Science and Technology-B, Vol. 11, no. 5, pp. 923-928, June/July 1995.
6.R. Bashir, W. McKweon, A. E. Kabir, "A Simple Process to Produce High Quality Silicon Surface Prior to Selective Epitaxial Growth ", IEEE Electron Device Letters, Vol. 13, no. 8, pp. 392-395, June 1995.
5. H. Yen, E. P. Kvam, R. Bashir, G. W. Neudeck, "Microstructural Examination of Extended Crystal Defects in Silicon Selective Epitaxial Growth", Journal of Electronic Materials, Vol. 22, no. 11, pp. 1331-1339, 1993.
4.R. Bashir, S. Venkatesan, H. Yen, G. W. Neudeck, E. P. Kvam, "Doping of Poly-crystalline Silicon Films Using an Arsenic Spin-on-Dopant Source", Journal of Vaccum Science and Technology-B, Vol. 11, no. 5, pp. 1903-1905, Sept/Oct 1993.
3. R. Bashir, S. Venkatesan, G. W. Neudeck, J. P. Denton, "A Poly-Silicon Contacted Sub-Collector BJT for a 3-Dimensional BiCMOS Process", IEEE Electron Device Letters, Vol. 13, no. 8, pp. 392-395, Aug 1992.
2.R. Bashir, G. W. Neudeck, "A Technique to Measure the Dynamic Response of a-Si:H Circuits", Solid State Electronics, Vol. 33, no. 7, pp. 973-974, 1990.
1. R. Bashir, C. Subramaniam, G. W. Neudeck, K. Y. Chung, "Transit Time Studies and Electron Mobility Measurement in Hydrogenated Amorphous Silicon Thin Film Transistor", IEEE Transaction on Electron Devices, Vol. 36, no. 12, pp. 2944-2948, Dec. 1989.
A.K.M. Newaz, W.-J. Chang, K.D. Wallace, L.C. Edge, S.A.Wickline, R. Bashir, A. M. Gilbertson, L.F. Cohen, and S.A. Solin, "A ballistic Inverse-EOC nanosensor for sub-wavelength high sensitivity room temperature photon detection", Applied Physics Letters, 97, 2010.100.
A.M. Gilbertson, A.K.M. Newaz, Woo-Jin Chang, R. Bashir, S.A. Solin, and L.F. Cohen, "Dimensional crossover and weak localization in ultra thin n-GaAs films", Applied Physics Letters, 95, 012113, 2009.58.
S. Lee, R. Bashir, "Dielectrophoresis and Chemically Mediated Assembly of three Terminal Silicon MOSFETS", Advanced Materials, 17, 2671-2677, 2005.31.
R. Bashir, F. Hebert, J. DeSantis, J. M. McGregor, W. Yindeepol, K. Brown, R. Razouk, F. Moraveji, T. Mills, P. Hopper, J. Mcginty, L. Smith, and T. Krakowski, "A Complementary Bipolar Technology Family with a Vertically Integrated PNP for High Frequency Analog Applications", Special Issue on Bipolar Technology, IEEE Transactions on Electron Devices, vol. 48, no. 11, November 2001, pp. 2525-2534.25.
R. Bashir, K-J Chao, and A. E. Kabir, "Atomic Force Microscopy Study of Self-Assembled Si1-xGex Islands Produced by Controlled Relaxation of Strained Films", Journal of Vacuum Science and Technology-B, Vol. 19, No. 2, March/April 2001, pp. 517-522.24.
S. Lee and R. Bashir, "Modeling and Characterization of Deep Trench Isolation Structures", Microelectronics Journal, Vol. 32, No. 4, Jan 2001, pp. 295-300.21.
R. Bashir and F. Hebert, "Stability of Boron And Phosphorus Implanted Tungsten Silicide Structures at HighTemperatures", Journal of Vacuum Science and Technology-B, Vol. 18, No. 4, July/Aug, 2000.20.
J. Babcock, P. Francis, R. Bashir, A. E. Kabir, T. Dhayahude, W. Yindeepol, S. J. Prasad, A. Kalnitsky, M. E. Thomas, H. Haggag, K. Egan, R. Razouk, and D. K. Schroder, "Precision Electrical Trimming of Poly-SiGe Resistors", IEEE Electron Device Letters, Vol. 21, No. 6, pp. 283-285, June 2000.19.
R. Bashir, T. Su, J. M. Sherman, G. W. Neudeck, J. Denton, and A. Obeidat "Reduction of Sidewall Defect Induced Leakage Currents by the Use of Nitrided Field Oxides in Silicon Selective Epitaxial Growth (SEG) Isolation for Advanced ULSI", Journal of Vacuum Science and Technology-B, Vol. 18, No. 2, March/April 2000.18.
R. Gomez, G. W. Neudeck, R. Bashir, "On the Design and Fabricaton of Novel Lateral Bipolar Transistor in a Deep-Submicron Technology", Microelectronics Journal, Vol. 31, No. 3, pp. 199-205, Feb 2000.17.
A. E. Kabir, R. Bashir, J. Bernstein, J. De Santis, R. Mathews, J. O. O'Boyle, C. Bracken, "Very High Sensitivity Acoustic Transducers with Thin P+ Membrane and Gold Back Plate", Sensors and Actuators-A, Vol. 78, issue 2-3, pp.138-142, 17th Dec. 1999.16.
R. Bashir, A. E. Kabir, and K. Chao, "Formation of Self-Assembled Si1-xGex Islands Using Reduced Pressure Chemical Vapor Deposition and Subsequent Thermal Annealing of Thin Germanium Rich Films", Applied Surface Science, 152, pp. 99-106, 1999.15.
R. Bashir, A. E. Kabir, P. Westrom, D. Rossman, "Phosphorus and Arsenic Dopant Profile Control for High Performance Epitaxial Base Bipolar Junction Devices", Applied Physics Letters, Volume 75, Issue 6, pp. 796-798, August 9th , 1999.14.
R. Bashir, F. Wang, W. Yindepool, J. De Santis, J. McGregor, "Back Gated Buried Oxide MOSFETs in a High Voltage Bipolar Technology for Bonded Oxide/SOI Interface Characterization", IEEE Electron Device Letter, Vol. 19, No. 8, pp. 282-284, August 1998.13.
R. Bashir, A. E. Kabir, F. Hebert, C. Bracken, "Tungsten Silicide and Tungsten Polycide Anisotropic Dry Etch Process for Highly Controlled Dimensions and Profiles", Journal of Vacuum Science and Technology-B, 16(4), pp. 2118-2120, Jul/Aug 1998.12.
M. Jamal Deen, S. Rumyantsev, R. Bashir, R. Taylor, "Measurements and Comparison of Low Frequency Noise in NPN and PNP Polysilicon Emitter Bipolar Junction Transistors", Journal of Applied Physics, Vol. 84, No.1, pp. 625-633, 1st July 1998.11.
R. Bashir, F. Hebert, "PLATOP-A Novel Planarized Trench Isolation and Field Oxide Formation Using Poly-Silicon", IEEE Electron Device Letters, Vol.17, No. 7, pp. 352-354, July 1996.10.
J. M. Sherman, G. W. Neudeck, J. P. Denton, R. Bashir, W. W. Fultz, "Elimination of the Sidewall Defects in Selective Epitaxial Growth (SEG) of Silicon for a Dielectric Isolation Technology", IEEE Electron Device Letters, Vol.17, No. 6, pp. 267-269, June 1996.9.
R. Bashir, S. Kim, N. Qadri, D. Jin, G. W. Neudeck, J. P. Denton, G. Yeric, K. Wu, A. Tasch, "Degradation of Insulators in the Silicon Selective Epitaxial Growth Ambient", IEEE Electron Device Letters, Vol. 16, no. 9, pp. 306-308, Sept. 1995.8.
R. Bashir, G. W. Neudeck, H. Yen, E. P. Kvam, "Characterization and Modeling of Sidewall Defects in Selective Epitaxial Growth of Silicon", Journal of Vacuum Science and Technology-B, Vol. 11, no. 5, p. 928-935, June/July 1995.7.
R. Bashir, G. W. Neudeck, H. Yen, E. P. Kvam, and J. P. Denton, "Characterization of Sidewall Defects in Selective Epitaxial Growth of Silicon", Journal of Vacuum Science and Technology-B, Vol. 11, no. 5, pp. 923-928, June/July 1995.6.
R. Bashir, W. McKweon, A. E. Kabir, "A Simple Process to Produce High Quality Silicon Surface Prior to Selective Epitaxial Growth ", IEEE Electron Device Letters, Vol. 13, no. 8, pp. 392-395, June 1995.5. H. Yen, E. P. Kvam, R. Bashir, G. W. Neudeck, "Microstructural Examination of Extended Crystal Defects in Silicon Selective Epitaxial Growth", Journal of Electronic Materials, Vol. 22, no. 11, pp. 1331-1339, 1993.
4.
R. Bashir, S. Venkatesan, H. Yen, G. W. Neudeck, E. P. Kvam, "Doping of Poly-crystalline Silicon Films Using an Arsenic Spin-on-Dopant Source", Journal of Vaccum Science and Technology-B, Vol. 11, no. 5, pp. 1903-1905, Sept/Oct 1993.3. R. Bashir, S. Venkatesan, G. W. Neudeck, J. P. Denton, "A Poly-Silicon Contacted Sub-Collector BJT for a 3-Dimensional BiCMOS Process", IEEE Electron Device Letters, Vol. 13, no. 8, pp. 392-395, Aug 1992.
2.
R. Bashir, G. W. Neudeck, "A Technique to Measure the Dynamic Response of a-Si:H Circuits", Solid State Electronics, Vol. 33, no. 7, pp. 973-974, 1990.1. R. Bashir, C. Subramaniam, G. W. Neudeck, K. Y. Chung, "Transit Time Studies and Electron Mobility Measurement in Hydrogenated Amorphous Silicon Thin Film Transistor", IEEE Transaction on Electron Devices, Vol. 36, no. 12, pp. 2944-2948, Dec. 1989.